feb.1999 mitsubishi transistor modules qm50e2y/e3y-2h medium power switching use insulated type outline drawing & circuit diagram dimensions in mm application dc chopper, dc motor controllers, inverters qm50e2y/e3y-2h ? i c collector current .......................... 50a ? v cex collector-emitter voltage ......... 1000v ? h fe dc current gain............................... 75 ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271 94 80 (7) (7) 23 23 f 6.5 12 34 13 10.5 10.5 e 1 b 1 m5 tab#110, t=0.5 6.5 22.5 (8) 31 c 1 a 1 e 1 b 1 e 1 d 1 d 2 d 2 d 1 e 1 e 1 b 1 c 1 k 1 23 label (e 2 y) (e 3 y)
feb.1999 mitsubishi transistor modules qm50e2y/e3y-2h medium power switching use insulated type absolute maximum ratings (transistor part including d1, t j =25 c) symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) ratings 1000 1000 1000 7 50 50 400 3 500 unit v v v v a a w a a absolute maximum ratings (diode part (d2), t j =25 c) symbol v rrm v rsm v r (dc) i dc i fsm i 2 t parameter repetitive peak reverse voltage non-repetitive peak reverse voltage dc reverse voltage dc current surge (non-repetitive) forward current i 2 t for fusing conditions dc circuit, resistive, inductive load peak value of one cycle of 60hz (half wave) value for one cycle of surge current ratings 1000 1100 800 50 1000 4.2 10 3 unit v v v a a a 2 s absolute maximum ratings (common) symbol t j t stg v iso parameter junction temperature storage temperature isolation voltage mounting torque weight conditions charged part to case, ac for 1 minute main terminal screw m5 mounting screw m6 typical value ratings C40~150 C40~125 2500 1.47~1.96 15~20 1.96~2.94 20~30 210 unit c c v nm kgcm nm kgcm g unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 75/100 symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =1000v, v eb =2v v cb =1000v, emitter open v eb =7v i c =50a, i b =1a Ci c =50a (diode forward voltage) i c =50a, v ce =2.8v/5v v cc =600v, i c =50a, i b1 =Ci b2 =1a transistor part diode part conductive grease applied typ. max. 1.0 1.0 200 25 3.5 1.8 2.5 15 3.0 0.31 1.2 0.15 electrical characteristics (transistor part including d1, t j =25 c)
feb.1999 mitsubishi transistor modules qm50e2y/e3y-2h medium power switching use insulated type electrical characteristics (diode part (d2), t j =25 c) symbol i rrm v fm t rr q rr r th (j-c) r th (c-f) parameter repetitive peak reverse current forward voltage reverse recovery time reverse recovery charge thermal resistance contact thermal resistance test conditions v r =v rrm , t j =150 c i f =50a i f =50a, di/dt=C100a/ m s, v r =600v, t j =150 c junction to case conductive grease applied (case to fin) unit ma v m s m c c/w c/w limits min. typ. max. 10 1.5 1.0 25 0.65 0.15 performance curves common emitter input characteristic (typical) saturation voltage characteristics (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) saturation voltage v ce (sat) , v be (sat) (v) collector current i c (a) base-emitter voltage v be (v) common emitter output characteristics (typical) dc current gain vs. collector current (typical) 1 10 0 10 7 5 4 3 2 ? 10 7 5 4 3 2 1.6 2.0 2.4 2.8 3.2 3.6 v ce =2.8v t j =25? 3 10 7 5 4 3 2 2 10 7 5 4 3 2 0 10 23457 1 10 23457 2 10 2 v ce =2.8v v ce =5.0v t j =25? t j =125? 1 10 7 5 4 3 2 0 10 7 5 4 3 2 ? 10 0 10 23457 1 10 23457 2 10 t j =25? t j =125? v be(sat) v ce(sat) i b =1a 100 80 60 40 20 0 0 1.0 2.0 3.0 4.0 5.0 t j =25? i b =2.0a i b =1.0a i b =0.5a i b =0.3a i b =0.1a
feb.1999 mitsubishi transistor modules qm50e2y/e3y-2h medium power switching use insulated type collector-emitter saturation voltage (typical) switching time vs. collector current (typical) collector-emitter saturation voltage v ce (sat) (v) switching time t on , t s , t f ( m s) base current i b (a) collector current i c (a) switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) collector current i c (a) collector current i c (a) derating factor (%) 3 10 2 10 1 10 0 10 3 10 2 10 1 10 0 10 100 80 60 40 20 0 0 20 60 100 120 160 40 80 140 10 30 50 70 90 1 10 7 5 4 3 2 0 10 7 5 4 3457 0 10 23457 1 10 ? 10 2 3 3 2 t s t j =25? t j =125? i b1 =1a v cc =600v i c =50a t f 160 0 0 1000 800 600 400 200 20 40 60 80 100 120 140 i b2 =?a t j =125? i b2 =?a 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 4 4 4 50? 1ms dc t c =25? non-repetitive ? 10 7 5 4 3 2 7 5 4 3 2 0 1.0 2.0 3.0 4.0 5.0 0 10 2 ? 10 t j =25? t j =125? i c =20a i c =30a i c =50a 1 10 7 5 4 3 2 0 10 7 5 4 3 23457 1 10 23457 2 10 2 0 10 2 t j =25? t j =125? t f i b1 =? b2 =1a v cc =600v t on t s collector dissipation second break- down area
feb.1999 performance curves (diode part (d1)) mitsubishi transistor modules qm50e2y/e3y-2h medium power switching use insulated type transient thermal impedance characteristic (transistor) z th (j-c) ( c/w) time (s) forward characteristics (typical) maximum surge current forward current i f (a) conduction time (cycles at 60hz) forward voltage v f (a) reverse recovery characteristics (typical) transient thermal impedance characteristic forward current i f (a) time (s) i rr (a), q rr ( m c) surge forward current i fsm (a) z th (j-c) ( c/w) t rr ( m s) 0 10 ? 10 ? 10 ? 10 1 10 0 10 ? 10 2 10 1 10 0 10 ? 10 2 10 1 10 0 10 3 10 2 10 0 10 1 10 1 10 0 10 0 10 ? 10 ? 10 ? 10 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 100 200 300 400 500 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0.4 0.8 1.2 1.6 2.0 2.4 t j =25? t j =125? 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 4 4 4 t j =25? t j =125? v cc =600v i b1 =? b2 =1a i rr q rr t rr 7 5 3 2 7 5 3 2 7 5 3 2 0 3 2 7 5 3 2 0.4 2.0 4 4 4 4 45 0.8 1.2 1.6 7 5 3 2 7 5 3 2 7 5 3 2 0 5 3 2 7 5 3 2 0.5 4 4 4 4 4 0.4 0.3 0.2 0.1 7
feb.1999 i rr (a), q rr ( m c) surge forward current i fsm (a) reverse recovery characteristics (vs. di/dt) (typical) maximum surge current reverse recovery characteristics (vs. i f ) (typical) conduction time (cycles at 60hz) forward current i f (a) di/dt (a/ m s) i rr (a), q rr ( m c) mitsubishi transistor modules qm50e2y/e3y-2h medium power switching use insulated type maximum forward characteristic forward current i f (a) forward voltage v f (v) performance curves (diode part (d2)) z th (jCc) ( c/w) transient thermal impedance characteristic time (s) t rr ( m s) t rr ( m s) 2 10 1 10 0 10 ? 10 0 10 1 10 2 10 3 10 ? 10 2 10 1 10 0 10 2 10 1 10 0 10 ? 10 0 10 1 10 2 10 3 10 ? 10 2 10 1 10 0 10 1 10 0 10 ? 10 ? 10 ? 10 0 10 3 10 2 10 1 10 0 10 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 200 400 600 800 1000 7 5 3 2 7 5 3 2 7 5 3 2 0.6 1.0 1.4 1.8 2.2 t j =25? 7 5 3 2 7 5 3 2 7 5 3 2 0.2 0.4 0.6 0.8 1.0 0 5 3 2 5 3 2 4 4 4 4 4 7 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 4 4 4 v r =600v di/dt=?00a/? i rr q rr t rr t j =25? t j =150? 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 4 4 4 t j =25? t j =150? v r =600v i f =100a i rr q rr t rr
|
